STEADY-STATE MATHEMATICAL THEORY FOR INSULATED GATE FIELD-EFFECT TRANSISTOR

被引：31

作者：

KENNEDY, DP ^{[1
]}

MURLEY, PC ^{[1
]}

机构：

[1] IBM CORP, SYST PROD DIV LAB, E FISHKILL, NY 12533 USA

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1973年 / 17卷 / 01期

关键词：

D O I：

10.1147/rd.171.0002

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：1 / 12

页数：12

共 12 条

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[8] A UNIPOLAR FIELD-EFFECT TRANSISTOR [J].

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[9] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J].

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BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :435-489

[10] ION-IMPLANTED COMPLEMENTARY MOS-TRANSISTORS IN LOW-VOLTAGE CIRCUITS [J].

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