DESIGN THEORY OF A SURFACE FIELD-EFFECT TRANSISTOR

被引:125
作者
IHANTOLA, HKJ
MOLL, JL
机构
关键词
D O I
10.1016/0038-1101(64)90039-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:423 / 430
页数:8
相关论文
共 8 条
[1]   N-TYPE SURFACE CONDUCTIVITY ON P-TYPE GERMANIUM [J].
BROWN, WL .
PHYSICAL REVIEW, 1953, 91 (03) :518-527
[2]   THE FIELD EFFECT TRANSISTOR [J].
DACEY, GC ;
ROSS, IM .
BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (06) :1149-1189
[3]   PHYSICAL THEORY OF SEMICONDUCTOR SURFACES [J].
GARRETT, CGB ;
BRATTAIN, WH .
PHYSICAL REVIEW, 1955, 99 (02) :376-387
[4]   PHYSICAL PHENOMENON RESPONSIBLE FOR SATURATION CURRENT IN FIELD EFFECT DEVICES [J].
GROSVALET, J ;
MOTSCH, C ;
TRIBES, R .
SOLID-STATE ELECTRONICS, 1963, 6 (01) :65-67
[5]   EFFECTIVE CARRIER MOBILITY IN SURFACE-SPACE CHARGE LAYERS [J].
SCHRIEFFER, JR .
PHYSICAL REVIEW, 1955, 97 (03) :641-646
[6]   A UNIPOLAR FIELD-EFFECT TRANSISTOR [J].
SHOCKLEY, W .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1365-1376
[8]   TFT - NEW THIN-FILM TRANSISTOR [J].
WEIMER, PK .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (06) :1462-&