LOW-LEVEL CURRENTS IN INSULATED GATE FIELD-EFFECT TRANSISTORS

被引：112

作者：

BARRON, MB

机构：

来源：

SOLID-STATE ELECTRONICS | 1972年 / 15卷 / 03期

关键词：

D O I：

10.1016/0038-1101(72)90084-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：293 / +

页数：1

共 15 条

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