ION-IMPLANTED COMPLEMENTARY MOS-TRANSISTORS IN LOW-VOLTAGE CIRCUITS

被引：265

作者：

SWANSON, RM

MEINDL, JD

机构：

来源：

关键词：

D O I：

10.1109/JSSC.1972.1050260

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：146 / +

页数：1

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[9]

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