A MOLYBDENIUM SOURCE, GATE AND DRAIN METALLIZATION SYSTEM FOR GAAS-MESFET LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：16

作者：

DEVLIN, WJ ^{[1
]}

WOOD, CEC ^{[1
]}

STALL, R ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

SOLID-STATE ELECTRONICS | 1980年 / 23卷 / 08期

关键词：

D O I：

10.1016/0038-1101(80)90098-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：823 / 829

页数：7

共 33 条

[1] DEVELOPMENT OF OHMIC CONTACTS FOR GAAS DEVICES USING EPITAXIAL GE FILMS [J].

ANDERSON, WT ;

CHRISTOU, A ;

DAVEY, JE .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) :430-435

[2] NON-ALLOYED OHMIC CONTACTS TO NORMAL-GAAS BY MOLECULAR-BEAM EPITAXY [J].

BARNES, PA ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :651-653

[3] CONTACT RESISTANCE AND CONTACT RESISTIVITY [J].

BERGER, HH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (04) :507-&

[4] HIGH-PERFORMANCE GAAS QUASI-PLANAR VARACTORS FOR MILLIMETER WAVES [J].

CALVIELLO, JA ;

WALLACE, JL ;

BIE, PR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (10) :624-630

[5]

CALVIELLO JA, 1975, AUG C ACT SEM DEV MI

[6] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS [J].

CHANG, CY ;

FANG, YK ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1971, 14 (07) :541-&

[7] STRUCTURE AND THERMAL-STABILITY OF SPUTTERED AU-TA FILMS [J].

CHRISTOU, A ;

DAY, H .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (08) :3386-3393

[8] SOLID-PHASE FORMATION IN AU-GE-NI, AG-IN-GE, IN-AU-GE GAAS OHMIC CONTACT SYSTEMS [J].

CHRISTOU, A .

SOLID-STATE ELECTRONICS, 1979, 22 (02) :141-&

[9] ELECTRON TUNNELING IN METAL-SEMICONDUCTOR BARRIERS [J].

CONLEY, JW ;

DUKE, CB ;

MAHAN, GD ;

TIEMANN, JJ .

PHYSICAL REVIEW, 1966, 150 (02) :466-&

[10] EXPERIMENTAL ASPECTS OF TUNNELING IN METAL-SEMICONDUCTOR BARRIERS [J].

CONLEY, JW ;

TIEMANN, JJ .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) :2880-&

← 1 2 3 4 →