SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS

被引:286
作者
CHANG, CY
FANG, YK
SZE, SM
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D O I
10.1016/0038-1101(71)90129-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:541 / &
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共 12 条
[1]   EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON [J].
BARBER, HD .
SOLID-STATE ELECTRONICS, 1967, 10 (11) :1039-&
[2]   CARRIER TRANSPORT ACROSS METAL-SEMICONDUCTOR BARRIERS [J].
CHANG, CY ;
SZE, SM .
SOLID-STATE ELECTRONICS, 1970, 13 (06) :727-+
[3]   NORMALIZED THERMIONIC-FIELD (T-F) EMISSION IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS [J].
CROWELL, CR ;
RIDEOUT, VL .
SOLID-STATE ELECTRONICS, 1969, 12 (02) :89-&
[4]   RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES [J].
CROWELL, CR .
SOLID-STATE ELECTRONICS, 1965, 8 (04) :395-&
[5]   ELECTRON-OPTICAL-PHONON SCATTERING IN EMITTER AND COLLECTOR BARRIERS OF SEMICONDUCTOR-METAL-SEMICONDUCTOR STRUCTURES [J].
CROWELL, CR ;
SZE, SM .
SOLID-STATE ELECTRONICS, 1965, 8 (12) :979-&
[6]   RICHARDSON CONSTANT AND TUNNELING EFFECTIVE MASS FOR THERMIONIC AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIER DIODES [J].
CROWELL, CR .
SOLID-STATE ELECTRONICS, 1969, 12 (01) :55-&
[7]  
NEUBERGER M, 1969, BIBLIOGRAPHY SUPPLEM
[8]   FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS [J].
PADOVANI, FA ;
STRATTON, R .
SOLID-STATE ELECTRONICS, 1966, 9 (07) :695-&
[9]  
Schwartz B., 1969, OHMIC CONTACTS SEMIC
[10]   CYCLOTRON RESONANCE OF ELECTRONS IN SILICON AT TEMPERATURES UP TO 200 DEGREES K [J].
STRADLIN.RA ;
ZHUKOV, VV .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1966, 87 (555P) :263-&