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FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS

被引：1156
作者：
PADOVANI, FA
STRATTON, R
机构：
来源：
SOLID-STATE ELECTRONICS | 1966年 / 9卷 / 07期
关键词：
D O I：
10.1016/0038-1101(66)90097-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：695 / &
相关论文
共 16 条
[1]  
ATALLA MM, AF196281637
[2]  
ATALLA MM, 1962, 1 SCIENT REP
[3]   RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES [J].
CROWELL, CR .
SOLID-STATE ELECTRONICS, 1965, 8 (04) :395-&
[4]   METAL-SEMICONDUCTOR BARRIER-HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD-DEGENERATE 1-CARRIER SYSTEM [J].
GOODMAN, AM ;
PERKINS, DM .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (11) :3351-&
[5]  
HENISH HK, 1957, RECTIFYING SEMICONDU
[6]   CONDUCTION PROPERTIES OF THE AU-NORMAL-TYPE-SI SCHOTTKY BARRIER [J].
KAHNG, D .
SOLID-STATE ELECTRONICS, 1963, 6 (03) :281-295
[7]   ACCURATE SOLUTION OF AN IDEALIZED ONE-CARRIER METAL-SEMICONDUCTOR JUNCTION PROBLEM [J].
MACDONALD, JR .
SOLID-STATE ELECTRONICS, 1962, 5 (JAN-F) :11-37
[8]   THERMIONIC EMISSION, FIELD EMISSION, AND THE TRANSITION REGION [J].
MURPHY, EL ;
GOOD, RH .
PHYSICAL REVIEW, 1956, 102 (06) :1464-1473
[9]  
PADOVANI FA, TO BE PBULSIHED
[10]  
PADOVANI FA, TO BE PUBLSIHED
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