DEVELOPMENT OF OHMIC CONTACTS FOR GAAS DEVICES USING EPITAXIAL GE FILMS

被引：39

作者：

ANDERSON, WT

CHRISTOU, A

DAVEY, JE

机构：

来源：

关键词：

D O I：

10.1109/JSSC.1978.1051073

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：430 / 435

页数：6

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[6]

Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[7]

HOWER PL, 1971, SEMICONDUCTORS SEM A, V7, P178

[8]

MILNES AG, 1972, HETEROJUNCTIONS META, P9

[9]

OMORI M, 1977, RELIABILITY PHYSICS, P232

[10] LIQUID-PHASE EPITAXIAL-GROWTH OF GAAS FROM AU-GE-NI MELTS [J].

OTSUBO, M ;

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MIKI, H .