LIQUID-PHASE EPITAXIAL-GROWTH OF GAAS FROM AU-GE-NI MELTS

被引：39

作者：

OTSUBO, M ^{[1
]}

KUMABE, H ^{[1
]}

MIKI, H ^{[1
]}

机构：

[1] MITSUBISHI ELECT CORP,CENT RES LABS,ITAMI,HYOGO 664,JAPAN

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 07期

关键词：

D O I：

10.1016/0038-1101(77)90101-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：617 / 621

页数：5

共 26 条

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[6]

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[8]

KUMABE H, UNPUBLISHED

[9]

MACKSEY MH, 1975, AUG C ACT SEM DEV MI

[10]

MILNES AG, 1972, HETEROJUNCTION METAL, P290

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