LASER ANNEALED TA-GE AND NI-GE OHMIC CONTACTS TO GAAS

被引：9

作者：

ANDERSON, WT

CHRISTOU, A

GIULIANI, JF

机构：

来源：

ELECTRON DEVICE LETTERS | 1981年 / 2卷 / 05期

关键词：

D O I：

10.1109/EDL.1981.25363

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：115 / 117

页数：3

共 12 条

[1] DEVELOPMENT OF OHMIC CONTACTS FOR GAAS DEVICES USING EPITAXIAL GE FILMS [J].

ANDERSON, WT ;

CHRISTOU, A ;

DAVEY, JE .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) :430-435

[2]

ANDERSON WT, 1980, 1980 WORKSH COMP SEM

[3] OHMIC CONTACTS PRODUCED BY LASER-ANNEALING TE-IMPLANTED GAAS [J].

BARNES, PA ;

LEAMY, HJ ;

POATE, JM ;

FERRIS, SD ;

WILLIAMS, JS ;

CELLER, GK .

APPLIED PHYSICS LETTERS, 1978, 33 (11) :965-967

[4]

Bloembergen N., 1979, LASER SOLID INTERACT, P1, DOI DOI 10.1063/1.31659

[5] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS [J].

CHANG, CY ;

FANG, YK ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1971, 14 (07) :541-&

[6]

CHRISTOU A, 1979, 37TH ANN DEV RES C B

[7]

COQUAT JA, 1980, 1980 P EL COMP C NEW, P55

[8] OHMIC CONTACTS FOR GAAS DEVICES [J].

COX, RH ;

STRACK, H .

SOLID-STATE ELECTRONICS, 1967, 10 (12) :1213-+

[9] DEVICE FOR LASER-BEAM DIFFUSION AND HOMOGENIZATION [J].

CULLIS, AG ;

WEBBER, HC ;

BAILEY, P .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1979, 12 (08) :688-689

[10]

ECHARDT G, 1980, LASER ELECTRON BEAM, P467

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