ANALYSIS OF THRESHOLD VOLTAGE FOR SHORT-CHANNEL IGFETS

被引：109

作者：

LEE, HS ^{[1
]}

机构：

[1] IBM CORP,SYST PROD DIV,ESSEX JUNCTION,VT 05452

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 12期

关键词：

D O I：

10.1016/0038-1101(73)90055-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Transistors, Field effect

引用

页码：1407 / 1417

页数：11

共 11 条

[1] 2-DIMENSIONAL SOLUTION OF DC CHARACTERISTICS FOR MOST [J].

ARMSTRONG, GA ;

MAGOWAN, JA ;

RYAN, WD .

ELECTRONICS LETTERS, 1969, 5 (17) :406-+

[2] LOW-LEVEL CURRENTS IN INSULATED GATE FIELD-EFFECT TRANSISTORS [J].

BARRON, MB .

SOLID-STATE ELECTRONICS, 1972, 15 (03) :293-+

[3]

BARRON MB, 1969, 55011 STANF EL LAB R

[4] N-TYPE SURFACE CONDUCTIVITY ON P-TYPE GERMANIUM [J].

BROWN, WL .

PHYSICAL REVIEW, 1953, 91 (03) :518-527

[5] A SIMPLE THEORY FOR THRESHOLD VOLTAGE MODULATION IN IGFETS [J].

CHENEY, GT ;

KOTCH, RA .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (05) :887-&

[6]

GOSNEY WM, 1972, IEEE T ELECTRON DEV, VED19, P213

[7] SURFACE EFFECTS ON P-N JUNCTIONS - CHARACTERISTICS OF SURFACE SPACE-CHARGE REGIONS UNDER NON-EQUILIBRIUM CONDITIONS [J].

GROVE, AS ;

FITZGERALD, DJ .

SOLID-STATE ELECTRONICS, 1966, 9 (08) :783-+

[8] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].

GROVE, AS ;

DEAL, BE ;

SNOW, EH ;

SAH, CT .

SOLID-STATE ELECTRONICS, 1965, 8 (02) :145-+

[9] THEORETICAL THRESHOLD VOLTAGES FOR MOS FIELD EFFECT TRANSISTORS [J].

RICHMAN, P .

SOLID-STATE ELECTRONICS, 1968, 11 (09) :869-&

[10] DECREASE OF FET THRESHOLD VOLTAGE DUE TO BORON DEPLETION DURING THERMAL OXIDATION [J].

SCHOTTKY, G .

SOLID-STATE ELECTRONICS, 1971, 14 (06) :467-&

← 1 2 →