2-DIMENSIONAL SOLUTION OF DC CHARACTERISTICS FOR MOST

被引:16
作者
ARMSTRONG, GA
MAGOWAN, JA
RYAN, WD
机构
[1] Department of Electrical Engineering Queen's University of Belfast
关键词
D O I
10.1049/el:19690307
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A method is outlined for the determination of a 2-dimensional solution of the potential distribution in the substrate of the m.o.s.t., based on the complete depletion-neutral approximation. Channel current is derived from a 1-dimensional solution of the continuity equation along the silicon-silicon dioxide interface, for given values of extrinsically applied electrode potentials. Theoretical characteristics have been validated by comparison with those of a practical device. A discussion of pinchoff is also included. © 1969, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码:406 / +
页数:1
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