SOURCE TO DRAIN RESISTANCE BEYOND PINCH-OFF IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS (MOST)

被引:50
作者
REDDI, VGK
SAH, CT
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D O I
10.1109/T-ED.1965.15469
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:139 / +
页数:1
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共 5 条
[1]   N-TYPE SURFACE CONDUCTIVITY ON P-TYPE GERMANIUM [J].
BROWN, WL .
PHYSICAL REVIEW, 1953, 91 (03) :518-527
[2]   INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].
GROVE, AS ;
DEAL, BE ;
SNOW, EH ;
SAH, CT .
SOLID-STATE ELECTRONICS, 1965, 8 (02) :145-+
[3]  
PAO HC, TO BE PUBLISHED
[5]   THEORY OF THE SPACE-CHARGE-LIMITED SURFACE-CHANNEL DIELECTRIC TRIODE [J].
WRIGHT, GT .
SOLID-STATE ELECTRONICS, 1964, 7 (02) :167-175