OXIDATION MECHANISMS IN TISI2 FILMS ON SINGLE SILICON SUBSTRATES

被引：42

作者：

CHEN, JR

HOUNG, MP

HSIUNG, SK

LIU, YC

机构：

[1] CHUNG YUAN CHRISTIAN COLL SCI & ENGN,DEPT ELECTR ENGN,CHUNG LI,TAIWAN

[2] NATL TSINGHUA UNIV,DEPT PHYS,HSINCHU,TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 09期

关键词：

D O I：

10.1063/1.92094

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：824 / 826

页数：3

共 14 条

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[2]

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[4]

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[5] OXIDATION OF SPUTTERED MOLYBDENUM SILICIDE THIN-FILMS [J].

INOUE, T ;

KOIKE, K .

APPLIED PHYSICS LETTERS, 1978, 33 (09) :826-827

[6] ELIMINATION OF O-16(2+) EFFECT IN BACKSCATTERING STUDIES OF THIN-FILM REACTIONS [J].

LIU, YC ;

CHOU, CF ;

MAA, JS .

THIN SOLID FILMS, 1977, 47 (03) :L5-L7

[7]

LYNCH CT, 1974, HDB MATERIAL SCI, V1

[8] BACKSCATTERING ANALYSIS OF THE SUCCESSIVE LAYER STRUCTURES OF TITANIUM SILICIDES [J].

MAA, JS ;

LIN, CJ ;

LIU, JH ;

LIU, YC .

THIN SOLID FILMS, 1979, 64 (03) :439-444

[9]

MOCHIZUKI T, 1978, 1977 EL SOC FALL M A, P331

[10]

MOCHIZUKI T, 1977, JPN J APPL PHYS S, V17, P37

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