PHYSICAL LIMITS IN DIGITAL ELECTRONICS

被引：203

作者：

KEYES, RW ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

PROCEEDINGS OF THE IEEE | 1975年 / 63卷 / 05期

关键词：

D O I：

10.1109/PROC.1975.9825

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：740 / 767

页数：28

共 119 条

[91]

ROTHSTEIN L, 1971, ELECTRON ENG JUN, P24

[92] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].

SAH, CT ;

NOYCE, RN ;

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243

[93] INFLUENCE OF SEMICONDUCTOR DEVICES ON EVOLUTION OF COMPUTER SYSTEMS [J].

SCARROTT, GG .

RADIO AND ELECTRONIC ENGINEER, 1973, 43 (1-2) :99-102

[94]

Shannon C. E., 2001, ACM SIGMOBILE MOBILE, V5, P355, DOI [DOI 10.1002/J.1538-7305.1948.TB01338.X, 10.1145/584091.584093]

[95] PROBLEMS RELATED TO P-N JUNCTIONS IN SILICON [J].

SHOCKLEY, W .

SOLID-STATE ELECTRONICS, 1961, 2 (01) :35-+

[96] SOME PREDICTED EFFECTS OF TEMPERATURE GRADIENTS ON DIFFUSION IN CRYSTALS [J].

SHOCKLEY, W .

PHYSICAL REVIEW, 1953, 91 (06) :1563-1564

[97] THEORY OF DOMAIN-WALL MOTION IN MAGNETIC-FILMS AND PLATELETS [J].

SLONCZEW.JC .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (04) :1759-1770

[98]

SMITH WV, 1974, ELECTRONIC INFORMATI

[99] CIRCUIT CONSIDERATIONS RELATING TO MICROELECTRONICS [J].

SURAN, JJ .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1961, 49 (02) :420-&

[100] ION-IMPLANTED COMPLEMENTARY MOS-TRANSISTORS IN LOW-VOLTAGE CIRCUITS [J].

SWANSON, RM ;

MEINDL, JD .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (02) :146-+

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