IONIZATION RATES OF HOLES + ELECTRONS IN SILICON

被引：357

作者：

LEE, CA

KLEIMACK, JJ

BATDORF, RL

WIEGMANN, W

LOGAN, RA

机构：

来源：

PHYSICAL REVIEW | 1964年 / 134卷 / 3A期

关键词：

D O I：

10.1103/PhysRev.134.A761

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：A761 / +

共 26 条

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[8] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .2. STRUCTURALLY PERFECT JUNCTIONS [J].

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[9]

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[10] ANOMALOUS IMPURITY DIFFUSION IN EPITAXIAL SILICON NEAR THE SUBSTRATE [J].

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MANZ, RC .

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