DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS

被引：472

作者：

BARAFF, GA

机构：

来源：

PHYSICAL REVIEW | 1962年 / 128卷 / 06期

关键词：

D O I：

10.1103/PhysRev.128.2507

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2507 / &

共 11 条

[1] UNIFORM SILICON P-N JUNCTIONS .2. IONIZATION RATES FOR ELECTRONS [J].

CHYNOWETH, AG .

[2] AVALANCHE BREAKDOWN IN SILICON [J].

MCKAY, KG .

PHYSICAL REVIEW, 1954, 94 (04) :877-884

[3] IONIZATION RATES FOR HOLES AND ELECTRONS IN SILICON [J].

MILLER, SL .

PHYSICAL REVIEW, 1957, 105 (04) :1246-1249

[4] SECONDARY MULTIPLICATION IN SILICON [J].

MOLL, JJ ;

MEYER, NI .

[5]

SEITZ F, 1948, PHYS REV, V73, P550

[6] PROBLEMS RELATED TO P-N JUNCTIONS IN SILICON [J].

SHOCKLEY, W .

[7] HOT ELECTRONS IN GERMANIUM AND OHMS LAW [J].

SHOCKLEY, W .

BELL SYSTEM TECHNICAL JOURNAL, 1951, 30 (04) :990-1034

[8] PROBLEMS RELATED TO P-N JUNCTIONS IN SILICON [J].

SHOCKLEY, W .

[9] MOTION OF GASEOUS IONS IN STRONG ELECTRIC FIELDS [J].

WANNIER, GH .

BELL SYSTEM TECHNICAL JOURNAL, 1953, 32 (01) :170-254

WILF, HS .