DIFFUSION OF IMPURITIES INTO EVAPORATING SILICON

被引：52

作者：

BATDORF, RL

SMITS, FM

机构：

来源：

关键词：

D O I：

10.1063/1.1735142

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：259 / 264

页数：6

共 20 条

BACKENSTOSS, G .

BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (03) :699-710

[2]

BEMSKI G, UNPUBLISHED

BOND, WL ;

SMITS, FM .

BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (05) :1209-1221

[4]

CORNLISON B, 1957, I RADIO ENG WESCON 3, P22

[5]

Davis R.E, 1957, United States Patent, Patent No. [2,792,317, 2792317]

[6]

DUSHMAN S, 1949, SCI F VACUUM TECHNIQ, pCH1

FROSCH, CJ ;

DERICK, L .

[8]

FROSCH CJ, 1958, TRANSISTOR TECHNOLOG, V3, pCH3

[9] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J].

FULLER, CS ;

DITZENBERGER, JA .

[10] DIFFUSION OF BORON AND PHOSPHORUS INTO SILICON [J].

FULLER, CS ;

DITZENBERGER, JA .