EVALUATION OF THE SURFACE CONCENTRATION OF DIFFUSED LAYERS IN SILICON

被引：64

作者：

BACKENSTOSS, G

机构：

来源：

BELL SYSTEM TECHNICAL JOURNAL | 1958年 / 37卷 / 03期

关键词：

D O I：

10.1002/j.1538-7305.1958.tb03882.x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：699 / 710

页数：12

共 6 条

[1]

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BOND, WL ;

SMITS, FM .

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[3] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J].

FULLER, CS ;

DITZENBERGER, JA .

[4] MEASUREMENT OF SHEET RESISTIVITIES WITH THE 4-POINT PROBE [J].

SMITS, FM .

BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (03) :711-718

[5]

SMITS FM, 1956, INT S SEMICONDUCTORS

[6] RESISTIVITY MEASUREMENTS ON GERMANIUM FOR TRANSISTORS [J].

VALDES, LB .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (02) :420-427