THERMAL-OXIDATION OF NICKEL DISILICIDE

被引：45

作者：

BARTUR, M

NICOLET, MA

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 02期

关键词：

D O I：

10.1063/1.93033

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：175 / 177

页数：3

共 23 条

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[2]

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[4]

Chu WK., 1978, BACKSCATTERING SPECT

[5] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

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[6]

GROVE AS, 1967, PHYS TECHNOL S, P102

[7]

GROVE AS, 1967, PHYS TECHNOL S, P23

[8] OXIDATION OF SPUTTERED MOLYBDENUM SILICIDE THIN-FILMS [J].

INOUE, T ;

KOIKE, K .

APPLIED PHYSICS LETTERS, 1978, 33 (09) :826-827

[9] SILICON OXIDATION STUDIES - OXIDATION OF HEAVILY B-DOPED AND P-DOPED SINGLE-CRYSTAL SILICON [J].

IRENE, EA ;

DONG, DW .

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[10]

MAENPAA M, COMMUNICATION

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