SCHOTTKY-BARRIER HEIGHT OF AU-PARA-INGAASP ALLOYS LATTICE-MATCHED TO INP

被引：19

作者：

ESCHER, JS ^{[1
]}

JAMES, LW ^{[1
]}

SANKARAN, R ^{[1
]}

ANTYPAS, GA ^{[1
]}

MOON, RL ^{[1
]}

BELL, RL ^{[1
]}

机构：

[1] VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1976年 / 13卷 / 04期

关键词：

D O I：

10.1116/1.569009

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：874 / 875

页数：2

共 10 条

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[9] DEPENDENCE OF BARRIER HEIGHT ON ENERGY-GAP IN AU N-TYPE GAAS1-XPX SCHOTTKY DIODES [J].

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[10] GROWTH AND CHARACTERIZATION OF INGAASP-INP LATTICE-MATCHED HETEROJUNCTIONS [J].

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ANTYPAS, GA ;

MOON, RL ;

ESCHER, JS ;

JAMES, LW .

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