DEPENDENCE OF BARRIER HEIGHT ON ENERGY-GAP IN AU N-TYPE GAAS1-XPX SCHOTTKY DIODES

被引：11

作者：

RIDEOUT, VL ^{[1
]}

机构：

[1] IBM,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10000

来源：

关键词：

D O I：

10.1016/0038-1101(74)90152-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1107 / 1108

页数：2

共 9 条

[1]

BLAKESLEE AE, TO BE PUBLISHED

[2]

CRAFORD MG, 1973, PROGR SOLID STATE CH, V8, P127

[3]

GOLDBERG YA, 1972, SOV PHYS SEMICOND+, V6, P398

[4]

GOLDBERG YA, 1972, FIZ TEKH POLUPROV, V6, P462

[5] FUNDAMENTAL TRANSITION IN ELECTRONIC NATURE OF SOLIDS [J].

KURTIN, S ;

MCGILL, TC ;

MEAD, CA .

[6] INTERFACES AND RECOMBINATION CURRENTS IN SCHOTTKY-BARRIER DIODES [J].

LADBROOKE, PH .

[7]

LADBROOKE PH, 1972, SOLID STATE ELECTRON, V16, P743

[8]

ONTON A, 1973, ADV SOLID STATE PHYS, V13, P59

[9] CONDUCTION BAND MINIMA OF GA(AS1MINUSXPX) [J].

SPITZER, WG ;

MEAD, CA .

PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (3A) :A872-&