SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES

被引：256

作者：

KAJIYAMA, K

MIZUSHIMA, Y

SAKATA, S

机构：

来源：

关键词：

D O I：

10.1063/1.1654957

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：458 / 459

页数：2

共 8 条

[1]

KAJIYAMA K, UNPUBLISHED

[2] FERMI LEVEL POSITION AT METAL-SEMICONDUCTOR INTERFACES [J].

MEAD, CA ;

SPITZER, WG .

PHYSICAL REVIEW, 1964, 134 (3A) :A713-+

[3] ELECTRICAL CHARCTERISTICS OF GAASP SCHOTTKY BARRIER DIODES [J].

NEAMEN, DA ;

GRANNEMANN, WW .

[4]

OKAMOTO H, PRIVATE COMMUNICATIO

[5] CONDUCTION BAND MINIMA OF GA(AS1MINUSXPX) [J].

SPITZER, WG ;

MEAD, CA .

PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (3A) :A872-&

[6]

WALPOLE N, 1971, J APPL PHYS, V42, P5609

[7] SOLID SOLUTION IN AIIIBV COMPOUNDS [J].

WOOLLEY, JC ;

SMITH, BA .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 72 (464) :214-223

[8] PHASE-DIAGRAM, CRYSTAL-GROWTH, AND BAND-STRUCTURE OF INXGA1-XAS [J].

WU, TY ;

PEARSON, GL .