OXIDATION OF SILICIDE THIN-FILMS - TISI2

被引：65

作者：

DHEURLE, F

IRENE, EA

TING, CY

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 04期

关键词：

D O I：

10.1063/1.93940

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：361 / 363

页数：3

共 15 条

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[2]

BAGLIN J, UNPUB

[3] OXIDATION MECHANISMS IN TISI2 FILMS ON SINGLE SILICON SUBSTRATES [J].

CHEN, JR ;

HOUNG, MP ;

HSIUNG, SK ;

LIU, YC .

APPLIED PHYSICS LETTERS, 1980, 37 (09) :824-826

[4] INVESTIGATION ON TISI2 THIN-FILM OXIDATION BY RADIOACTIVE-TRACER TECHNIQUE [J].

CHEN, JR ;

LIU, YC ;

CHU, SD .

APPLIED PHYSICS LETTERS, 1982, 40 (03) :263-265

[5] IMPLANTED NOBLE-GAS ATOMS AS DIFFUSION MARKERS IN SILICIDE FORMATION [J].

CHU, WK ;

LAU, SS ;

MAYER, JW ;

MULLER, H .

THIN SOLID FILMS, 1975, 25 (02) :393-402

[6]

DHEURLE FM, UNPUB

[7]

IRENE EA, 1978, J ELECTROCHEM SOC, V125, P1709

[8] KINETICS OF THE THERMAL-OXIDATION OF WSI2 [J].

MOHAMMADI, F ;

SARASWAT, KC ;

MEINDL, JD .

APPLIED PHYSICS LETTERS, 1979, 35 (07) :529-531

[9] THIN-FILM INTERACTION BETWEEN TITANIUM AND POLYCRYSTALLINE SILICON [J].

MURARKA, SP ;

FRASER, DB .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :342-349

[10] THERMAL-OXIDATION OF HAFNIUM SILICIDE FILMS ON SILICON [J].

MURARKA, SP ;

CHANG, CC .

APPLIED PHYSICS LETTERS, 1980, 37 (07) :639-641

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