SCHOTTKY-BARRIER DIODES OF MBE-DEPOSITED ANTIMONY ON N AND P GALLIUM-ARSENIDE

被引：5

作者：

CHENG, H

ZHANG, XJ

MILNES, AG

机构：

来源：

SOLID-STATE ELECTRONICS | 1984年 / 27卷 / 12期

关键词：

D O I：

10.1016/0038-1101(84)90052-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1117 / 1122

页数：6

共 14 条

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