LEED-AES-TDS CHARACTERIZATION OF SB OVERLAYERS ON GAAS(110)

被引：94

作者：

CARELLI, J

KAHN, A

机构：

来源：

SURFACE SCIENCE | 1982年 / 116卷 / 02期

关键词：

D O I：

10.1016/0039-6028(82)90441-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：380 / 390

页数：11

共 16 条

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[4]

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[6]

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[8] APPROACH TO STRUCTURE DETERMINATION OF COMPOUND SEMICONDUCTOR SURFACES BY KINEMATICAL LEED CALCULATIONS - GAAS(110) AND ZNSE(110) [J].

MARK, P ;

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[9] DYNAMICAL CALCULATION OF LOW-ENERGY ELECTRON-DIFFRACTION INTENSITIES FROM GAAS(110) - INFLUENCE OF BOUNDARY-CONDITIONS, EXCHANGE POTENTIAL, LATTICE-VIBRATIONS, AND MULTILAYER RECONSTRUCTIONS [J].

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[10] DESORPTION PROPERTIES OF SB ON A GAAS (100) SURFACE [J].

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