ATOMIC GEOMETRY OF AL-GAAS INTERFACES - GAAS (110)-P(1X1)-AL(THETA), 0 LESS-THAN-OR-EQUAL TO THETA LESS-THAN-OR-EQUAL TO 8.5 MONOLAYERS

被引：51

作者：

KAHN, A ^{[1
]}

CARELLI, J ^{[1
]}

KANANI, D ^{[1
]}

DUKE, CB ^{[1
]}

PATON, A ^{[1
]}

BRILLSON, L ^{[1
]}

机构：

[1] XEROX CORP,WEBSTER RES CTR,ROCHESTER,NY 14644

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期

关键词：

D O I：

10.1116/1.571058

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：331 / 334

页数：4

共 14 条

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[8] LEED INTENSITY ANALYSIS OF THE STRUCTURE OF AL ON GAAS(110) [J].

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[9]

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