Micro-cavity lasing of optically excited CdS thin films at room temperature

被引:21
作者
Bagnall, DM
Ullrich, B
Sakai, H
Segawa, Y
机构
[1] Univ Southampton, Dept Elect & Comp Sci, Southampton SO17 1BJ, Hants, England
[2] Inst Phys & Chem Res, Aoba Ku, Sendai, Miyagi 9800868, Japan
[3] Hiroshima Denki Inst Technol, Dept Elect Engn, Hiroshima 73901, Japan
关键词
semiconductor; II-VI; laser; CdS; PLD; microcavity; hexagonal;
D O I
10.1016/S0022-0248(00)00253-0
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Cadmium sulfide thin films, grown by pulsed laser deposition (PLD) on glass substrates, show green photoluminescence and lasing characteristics under optical excitation at room temperature. X-ray diffraction shows the polycrystalline films are of wurtzite structure and have (0 0 2) preferred orientation. Laser thresholds are around 1.8 MW cm(-2) and the peak emission is at 501 nm. Fabry-Perot laser modes are spaced at 16 nm indicating cavity lengths of 2.9 mu m. Results indicate that laser microcavities are consistently self-formed within the hexagonal lattice. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1015 / 1018
页数:4
相关论文
共 12 条
[1]   SPATIAL AND SPECTRAL CHARACTERISTICS AND A NEW MODEL OF LASER GENERATION FOR CDS-TYPE SINGLE-CRYSTALS UNDER ONE-PHOTON EXCITATION [J].
BRODIN, MS ;
VITRIKHOVSKII, NI ;
KYPEN, AA ;
SHEVEL, SG ;
YANUSHEVSKII, NI .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 78 (01) :349-363
[2]   Ultraviolet lasing in resonators formed by scattering in semiconductor polycrystalline films [J].
Cao, H ;
Zhao, YG ;
Ong, HC ;
Ho, ST ;
Dai, JY ;
Wu, JY ;
Chang, RPH .
APPLIED PHYSICS LETTERS, 1998, 73 (25) :3656-3658
[3]  
DENEU V, 1986, J APPL PHYS LETT, V49, P546
[4]   ROOM TEMPERATURE LASING OF CDS UNDER PULSED ELECTRON BOMBARDMENT [J].
NICOLL, FH .
APPLIED PHYSICS LETTERS, 1967, 10 (03) :69-&
[5]   Photoluminescence analysis of laser-deposited CdS films [J].
Perna, G ;
Ambrico, M ;
Capozzi, V ;
Smaldone, D ;
Martino, R .
JOURNAL OF LUMINESCENCE, 1997, 72-4 :90-92
[6]   Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films [J].
Tang, ZK ;
Wong, GKL ;
Yu, P ;
Kawasaki, M ;
Ohtomo, A ;
Koinuma, H ;
Segawa, Y .
APPLIED PHYSICS LETTERS, 1998, 72 (25) :3270-3272
[7]   Morphology of luminescent GaN films grown by molecular beam epitaxy [J].
TragerCowan, C ;
ODonnell, KP ;
Hooper, SE ;
Foxon, CT .
APPLIED PHYSICS LETTERS, 1996, 68 (03) :355-357
[8]   Photoluminescence properties of thin CdS films on glass formed by laser ablation [J].
Ullrich, B ;
Bagnall, DM ;
Sakai, H ;
Segawa, Y .
SOLID STATE COMMUNICATIONS, 1999, 109 (12) :757-760
[9]   The effect of the substrate on the emission features of thin CdS films formed by laser ablation [J].
Ullrich, B ;
Sakai, H ;
Dushkina, NM ;
Ezumi, H ;
Keitoku, S ;
Kobayashi, T .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 47 (02) :187-189
[10]   STIMULATED EMISSION FROM CDS THIN-FILMS EXCITED BY N2 LASER [J].
USHIKU, K ;
KAWABE, M ;
MASUDA, K ;
NAMBA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (05) :909-910