Photoluminescence analysis of laser-deposited CdS films

被引：12

作者：

Perna, G

Ambrico, M

Capozzi, V

Smaldone, D

Martino, R

机构：

[1] UNIV BARI,UNITA INFM,I-70126 BARI,ITALY

[2] CNR,INST MAT SPECIALI,I-85050 TITO,POTENZA,ITALY

来源：

JOURNAL OF LUMINESCENCE | 1997年 / 72-4卷

关键词：

photoluminescence; semiconductors; thin films;

D O I：

10.1016/S0022-2313(96)00355-9

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Temperature (T) dependence of photoluminescence spectra of laser ablated CdS films are presented. The analysis of spectral position and line width of the excitonic line versus T allows to calculate the critical parameters of CdS films.

引用

页码：90 / 92

页数：3

共 5 条

[1] Laser ablation of highly oriented CdSe thin films and CdSe/CdTe multilayers on silicon substrates [J].

Giardini, A ;

Ambrico, M ;

Smaldone, D ;

Martino, R ;

Parisi, GP ;

Capozzi, V ;

Perna, G .

APPLIED SURFACE SCIENCE, 1996, 106 :144-148

[2]

GIARDINI A, 1997, IN PRESS MAT SCI E B

[3] TEMPERATURE-DEPENDENCE OF THE DIELECTRIC FUNCTION AND THE INTERBAND CRITICAL-POINTS OF CDSE [J].

LOGOTHETIDIS, S ;

CARDONA, M ;

LAUTENSCHLAGER, P ;

GARRIGA, M .

PHYSICAL REVIEW B, 1986, 34 (04) :2458-2469

[4]

SCHULZ M, 1982, LANDOLTBORNSTEIN T A, V17

[5] TEMPERATURE DEPENDENCE OF ENERGY GAP IN SEMICONDUCTORS [J].

VARSHNI, YP .

PHYSICA, 1967, 34 (01) :149-&

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