Photoluminescence properties of thin CdS films on glass formed by laser ablation

被引：61

作者：

Ullrich, B ^{[1
]}

Bagnall, DM

Sakai, H

Segawa, Y

机构：

[1] RIKEN, Inst Phys & Chem Res, Photodynam Res Ctr, Sendai, Miyagi 9800868, Japan

[2] Hiroshima Univ, Dept Elect Engn, Aki Ku, Hiroshima 73901, Japan

来源：

SOLID STATE COMMUNICATIONS | 1999年 / 109卷 / 12期

关键词：

thin films; semiconductors; laser processing; luminescence;

D O I：

10.1016/S0038-1098(99)00028-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Photoluminescence at the fundamental transition of thin (1.5 mu m) CdS films formed by laser ablation on glass is investigated in the range 4-300 K. In contrast to previous studies on thin CdS films and crystals, the emission takes the form of a single peak over the whole temperature range centered at 487 and 500 nm at 4 and 300 K, respectively. By the application of the van Roosbroeck-Shockley relation and Urbach's rule, a direct relationship is shown between emission and absorption. It is further demonstrated that the LO phonon is found to form the Urbach tail and determines the temperature induced gap shift. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：757 / 760

页数：4

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