EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON

被引:269
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BARBER, HD
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10.1016/0038-1101(67)90122-0
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码:1039 / &
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[11]  
GIBSON AF, 1963, SEMICONDUCTORS, P171
[12]   ANALYSIS OF INTRINSIC RECOMBINATION RADIATION FROM SILICON AND GERMANIUM [J].
HAYNES, JR ;
LAX, M ;
FLOOD, WF .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :392-396
[13]   CYCLOTRON RESONANCE IN UNIAXIALLY STRESSED SILICON .2. NATURE OF COVALENT BOND [J].
HENSEL, JC ;
HASEGAWA, H ;
NAKAYAMA, M .
PHYSICAL REVIEW, 1965, 138 (1A) :A225-&
[14]   CYCLOTRON RESONANCE EXPERIMENTS IN UNIAXIALLY STRESSED SILICON - VALENCE BAND INVERSE MASS PARAMETERS AND DEFORMATION POTENTIALS [J].
HENSEL, JC ;
FEHER, G .
PHYSICAL REVIEW, 1963, 129 (03) :1041-&
[15]  
HERLET A, 1957, Z ANGEW PHYS, V9, P155
[16]   DETERMINATION OF FREE ELECTRON EFFECTIVE MASS OF N-TYPE SILICON [J].
HOWARTH, LE ;
GILBERT, JF .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (01) :236-&
[17]   ENERGY BAND STRUCTURE IN P-TYPE GERMANIUM AND SILICON [J].
KANE, EO .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) :82-99
[18]   SPECIFIC HEAT OF GERMANIUM AND SILICON AT LOW TEMPERATURES [J].
KEESOM, PH ;
SEIDEL, G .
PHYSICAL REVIEW, 1959, 113 (01) :33-39
[19]   STATISTICS AND GALVANOMAGNETIC EFFECTS IN GERMANIUM AND SILICON WITH WARPED ENERGY SURFACES [J].
LAX, B ;
MAVROIDES, JG .
PHYSICAL REVIEW, 1955, 100 (06) :1650-1657
[20]   FINE STRUCTURE IN THE ABSORPTION-EDGE SPECTRUM OF SI [J].
MACFARLANE, GG ;
MCLEAN, TP ;
QUARRINGTON, JE ;
ROBERTS, V .
PHYSICAL REVIEW, 1958, 111 (05) :1245-1254