CYCLOTRON RESONANCE EXPERIMENTS IN UNIAXIALLY STRESSED SILICON - VALENCE BAND INVERSE MASS PARAMETERS AND DEFORMATION POTENTIALS

被引：412

作者：

HENSEL, JC

FEHER, G

机构：

来源：

PHYSICAL REVIEW | 1963年 / 129卷 / 03期

关键词：

D O I：

10.1103/PhysRev.129.1041

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1041 / &

共 41 条

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[3]

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[8] PARAMAGNETIC RESONANCE ABSORPTION FROM ACCEPTORS IN SILICON [J].

FEHER, G ;

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GERE, EA .

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[9] SENSITIVITY CONSIDERATIONS IN MICROWAVE PARAMAGNETIC RESONANCE ABSORPTION TECHNIQUES [J].

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[10] OBSERVATION OF QUANTUM EFFECTS IN CYCLOTRON RESONANCE [J].

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