PHONON AND POLARON INTERACTION IN GERMANIUM-GALLIUM ARSENIDE TUNNEL HETEROJUNCTIONS

被引：11

作者：

NATHAN, MI

MARINACE, JC

机构：

来源：

PHYSICAL REVIEW | 1962年 / 128卷 / 05期

关键词：

D O I：

10.1103/PhysRev.128.2149

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2149 / +

页数：1

共 9 条

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HALL RN, 1961, 1960 P INT C SEM PRA, P196

[7] DIRECT OBSERVATION OF PHONONS DURING TUNNELING IN NARROW JUNCTION DIODES [J].

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[8] TUNNEL DIODES BY VAPOR GROWTH OF GE ON GE AND ON GAAS [J].

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[9] EPITAXIAL VAPOR GROWTH OF GE SINGLE CRYSTALS IN A CLOSED-CYCLE PROCESS [J].

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