DIRECT OBSERVATION OF PHONONS DURING TUNNELING IN NARROW JUNCTION DIODES

被引：91

作者：

HOLONYAK, N

LESK, IA

HALL, RN

TIEMANN, JJ

EHRENREICH, H

机构：

来源：

PHYSICAL REVIEW LETTERS | 1959年 / 3卷 / 04期

关键词：

D O I：

10.1103/PhysRevLett.3.167

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：167 / 168

页数：2

共 8 条

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[7] EXCITON AND PHONON EFFECTS IN THE ABSORPTION SPECTRA OF GERMANIUM AND SILICON [J].

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[8] EXCITON AND MAGNETO-ABSORPTION OF THE DIRECT AND INDIRECT TRANSITIONS IN GERMANIUM [J].

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PHYSICAL REVIEW, 1959, 114 (01) :80-89

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