GERMANIUM-GALLIUM ARSENIDE HETEROJUNCTIONS

被引：338

作者：

ANDERSON, RL

机构：

来源：

关键词：

D O I：

10.1147/rd.43.0283

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：283 / 287

页数：5

共 13 条

[1] A VAPOR-GROWN VARIABLE CAPACITANCE DIODE [J].

ANDERSON, RL ;

OROURKE, MJ .

[2]

ANDERSON RL, UNPUB APPARATUS DETE

[3]

ARMSTRONG HL, 1958, P IRE, V46, P1307

[4]

BETHE HA, 1942, NDRC4312 REP

[5]

BOHM DJ, 1951, QUANTUM THEORY, P278

[6]

COURANT ED, 1943, THESIS U ROCHESTER

[7]

DUNLAP WC, 1956, B AM PHYS SOC, V1, P294

[8] TUNNEL DIODES BY VAPOR GROWTH OF GE ON GE AND ON GAAS [J].

MARINACE, JC .

[9] Simplified and advanced Theory of the Boundary Layer Rectifiers [J].

Schottky, W. .

ZEITSCHRIFT FUR PHYSIK, 1942, 118 (9-10) :539-592

SHOCKLEY, W .

BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :435-489