CIRCUIT HOT CARRIER REU ABILITY SIMULATION IN ADVANCED CMOS TECHNOLOGY PROCESS DEVELOPMENT

被引：0

作者：

C.Li

JohnT.Yue

机构：

[1] Advanced Micro Devices

[2] Sunnyvale

[3] CA94088

[4] USA

关键词：

CIRCUIT HOT CARRIER REU ABILITY SIMULATION IN ADVANCED CMOS TECHNOLOGY PROCESS DEVELOPMENT;

会议名称：

1995 4th International Conference on Solid-State and Integrated Circuit Technology

会议时间：

1600-01-01

会议地点：

Beijing, China

中图分类号：

TN304.21

学科分类号：

0805 080501 080502 080903

类型：

摘要：

<正> DC Hot Carrier parameters, e.g. Idsat and Idlin, were found to be correlated to AC Ring Oscillator frequency degradation. The impact of crosstalk induced voltage overshoot to invertor hot carrier degradation was quantified by reliability simulation. A set of designable parameters were used to ensure deep submicron technology hot carrier reliability.

引用

页码：445 / 447

页数：3

共 1 条

[1] HOT CARRIER RELIABILITY CONSIDERATIONS FOR LOW Vdd CMOS TECHNOLOGY [C].

Chun Jiang, Dipu Pramanik & Chenming Hu VLSI Technology, Inc. McKay Dr., San Jose, CA . Tel:S--x EECS Department UC, Berkeley, CA .

1995 4th International Conference on Solid-State and Integrated Circuit Technology

,1600

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