THE EVOLUTION OF THE THEORY FOR THE VOLTAGE-CURRENT CHARACTERISTIC OF P-N JUNCTIONS

被引:64
作者
MOLL, JL
机构
来源
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1958年 / 46卷 / 06期
关键词
D O I
10.1109/JRPROC.1958.286846
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1076 / 1082
页数:7
相关论文
共 28 条
[1]  
[Anonymous], 1939, WISS VEROFF SIEMENS
[2]   INTERNAL FIELD EMISSION IN SILICON P-N JUNCTIONS [J].
CHYNOWETH, AG ;
MCKAY, KG .
PHYSICAL REVIEW, 1957, 106 (03) :418-426
[3]   SURFACE LEAKAGE CURRENT IN SILICON FUSED JUNCTION DIODES [J].
CUTLER, M ;
BATH, HM .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (01) :39-43
[4]  
Davydov B., 1938, TECHNICAL PHYS USSR, V5, P87
[5]   EXCESS SURFACE CURRENTS ON GERMANIUM AND SILICON DIODES [J].
ERIKSEN, WT ;
STATZ, H ;
DEMARS, GA .
JOURNAL OF APPLIED PHYSICS, 1957, 28 (01) :133-139
[6]   NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS [J].
ESAKI, L .
PHYSICAL REVIEW, 1958, 109 (02) :603-604
[7]   THEORY AND EXPERIMENT FOR A GERMANIUM P-N JUNCTION [J].
GOUCHER, FS ;
PEARSON, GL ;
SPARKS, M ;
TEAL, GK ;
SHOCKLEY, W .
PHYSICAL REVIEW, 1951, 81 (04) :637-638
[8]   POWER RECTIFIERS AND TRANSISTORS [J].
HALL, RN .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1512-1518
[9]  
KLEINKNECHT H, 1957, Z PHYSIK, V139, P599
[10]   THE FORWARD CHARACTERISTIC OF THE PIN DIODE [J].
KLEINMAN, DA .
BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (03) :685-706