EXCESS SURFACE CURRENTS ON GERMANIUM AND SILICON DIODES

被引：20

作者：

ERIKSEN, WT

STATZ, H

DEMARS, GA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1957年 / 28卷 / 01期

关键词：

D O I：

10.1063/1.1722563

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：133 / 139

页数：7

共 18 条

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[3]

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[4]

KENNEDY DP, 1954, JAN AM I EL ENG WINT

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[6]

KINGSTON RH, 1955, PHYS REV, V98, P1191

[7]

KRUYT HR, 1952, COLLOID SCI, V1, P236

[8] EFFECT OF WATER VAPOR ON GROWN GERMANIUM AND SILICON NP JUNCTION UNITS [J].

LAW, JT ;

MEIGS, PS .

JOURNAL OF APPLIED PHYSICS, 1955, 26 (10) :1265-1273

[9] A MECHANISM FOR WATER INDUCED EXCESS REVERSE DARK CURRENT ON GROWN GERMANIUM N-P JUNCTIONS [J].

LAW, JT .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (09) :1367-1370

[10] CHANNELS AND EXCESS REVERSE CURRENT IN GROWN GERMANIUM P-N JUNCTION DIODES [J].

MCWHORTER, AL ;

KINGSTON, RH .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (09) :1376-1380

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