GE-GAAS(110) INTERFACE FORMATION

被引：96

作者：

BAUER, RS

MCMENAMIN, JC

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 04期

关键词：

D O I：

10.1116/1.569804

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1444 / 1449

页数：6

共 31 条

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[4]

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[6] SELF-CONSISTENT CALCULATION OF ELECTRONIC-STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE [J].

BARAFF, GA ;

APPELBAUM, JA ;

HAMANN, DR .

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[7]

BAUER R, UNPUBLISHED

[8] EMPTY SEMICONDUCTOR SURFACE-STATES - CORE-LEVEL PHOTO-YIELD STUDIES [J].

BAUER, RS ;

BACHRACH, RZ ;

FLODSTROM, SA ;

MCMENAMIN, JC .

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[9]

BAUER RS, 1977, 3RD INT C SOL SURF, P2699

[10]

BAUER RS, 1977, 7TH P INT VAC C, P2699

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