SELF-CONSISTENT CALCULATION OF ELECTRONIC-STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE

被引：172

作者：

BARAFF, GA ^{[1
]}

APPELBAUM, JA ^{[1
]}

HAMANN, DR ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW LETTERS | 1977年 / 38卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.38.237

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：237 / 240

页数：4

共 12 条

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APPELBAUM, JA ;

HAMANN, DR .

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[2] GAAS(100) - ITS SPECTRUM, EFFECTIVE CHARGE, AND RECONSTRUCTION PATTERNS [J].

APPELBAUM, JA ;

BARAFF, GA ;

HAMANN, DR .

PHYSICAL REVIEW B, 1976, 14 (04) :1623-1632

[3] SI (100) SURFACE - THEORETICAL-STUDY OF UNRECONSTRUCTED SURFACE [J].

APPELBAUM, JA ;

BARAFF, GA ;

HAMANN, DR .

PHYSICAL REVIEW B, 1975, 11 (10) :3822-3831

[4] SURFACE-INDUCED CHARGE DISTURBANCES IN FILLED BANDS [J].

APPELBAUM, JA ;

HAMANN, DR .

PHYSICAL REVIEW B, 1974, 10 (12) :4973-4979

[5] SURFACE-POTENTIAL, CHARGE-DENSITY, AND IONIZATION-POTENTIAL FOR SI(111) - SELF-CONSISTENT CALCULATION [J].

APPELBAUM, JA ;

HAMANN, DR .

PHYSICAL REVIEW LETTERS, 1974, 32 (05) :225-228

[6] EFFECT OF ELECTRIC AND MAGNETIC-FIELD ON SELF-CONSISTENT POTENTIAL AT SURFACE OF A DEGENERATE SEMICONDUCTOR [J].

BARAFF, GA ;

APPELBAUM, JA .

PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02) :475-+

[7] CAPACITANCE OF P-N HETEROJUNCTIONS INCLUDING EFFECTS OF INTERFACE STATES [J].

DONNELLY, JP ;

MILNES, AG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (02) :63-+

[8] THE INTERFACE TRANSPORT PROPERTIES OF GE-GAAS HETEROJUNCTIONS [J].

ESAKI, L ;

HOWARD, WE ;

HEER, J .

SURFACE SCIENCE, 1964, 2 :127-135

[9]

FRENSLEY WR, TO BE PUBLISHED

[10]

Milnes AG, 1972, HETEROJUNCTIONS META

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