LOW-NOISE NORMALLY ON AND NORMALLY OFF TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTORS

被引：20

作者：

LAVIRON, M

DELAGEBEAUDEUF, D

DELESCLUSE, P

ETIENNE, P

CHAPLART, J

LINH, NT

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 06期

关键词：

D O I：

10.1063/1.93131

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：530 / 532

页数：3

共 13 条

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[2] TWO-DIMENSIONAL ELECTRON-GAS MESFET STRUCTURE [J].

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ETIENNE, P ;

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CHAPLART, J ;

LINH, NT .

ELECTRONICS LETTERS, 1980, 16 (17) :667-668

[3]

DELAGEBEAUDEUF D, UNPUB IEEE T ELECTRO

[4] TRANSPORT-PROPERTIES IN GAAS-ALXGA1-XAS HETEROSTRUCTURES AND MESFET APPLICATION [J].

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LAVIRON, M ;

CHAPLART, J ;

DELAGEBEAUDEUF, D ;

LINH, NT .

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[5] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].

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[6] 3 PERIOD (A1, GA) AS-GAAS HETEROSTRUCTURES WITH EXTREMELY HIGH MOBILITIES [J].

DRUMMOND, TJ ;

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MORKOC, H .

ELECTRONICS LETTERS, 1981, 17 (13) :442-444

[7]

HIYAMIZU S, 1981, JPN J APPL PHYS, V20, pL445

[8] LOW-NOISE TWO-DIMENSIONAL ELECTRON-GAS FET [J].

LAVIRON, M ;

DELAGEBEAUDEUF, D ;

DELESCLUSE, P ;

CHAPLART, J ;

LINH, NT .

ELECTRONICS LETTERS, 1981, 17 (15) :536-537

[9] ENHANCEMENT-MODE HIGH ELECTRON-MOBILITY TRANSISTORS FOR LOGIC APPLICATIONS [J].

MIMURA, T ;

HIYAMIZU, S ;

JOSHIN, K ;

HIKOSAKA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) :L317-L319

[10] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J].

MIMURA, T ;

HIYAMIZU, S ;

FUJII, T ;

NANBU, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) :L225-L227

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