LOW-NOISE TWO-DIMENSIONAL ELECTRON-GAS FET

被引：26

作者：

LAVIRON, M

DELAGEBEAUDEUF, D

DELESCLUSE, P

CHAPLART, J

LINH, NT

机构：

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 15期

关键词：

D O I：

10.1049/el:19810375

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：536 / 537

页数：2

共 10 条

[1] TWO-DIMENSIONAL ELECTRON-GAS MESFET STRUCTURE [J].

DELAGEBEAUDEUF, D ;

DELESCLUSE, P ;

ETIENNE, P ;

LAVIRON, M ;

CHAPLART, J ;

LINH, NT .

ELECTRONICS LETTERS, 1980, 16 (17) :667-668

[2]

DELAGEBEAUDEUF D, UNPUBLISHED

[3] TRANSPORT-PROPERTIES IN GAAS-ALXGA1-XAS HETEROSTRUCTURES AND MESFET APPLICATION [J].

DELESCLUSE, P ;

LAVIRON, M ;

CHAPLART, J ;

DELAGEBEAUDEUF, D ;

LINH, NT .

ELECTRONICS LETTERS, 1981, 17 (10) :342-344

[4] MOLECULAR-BEAM SYSTEM CONTROLLED BY QUADRUPOLE MASS-SPECTROMETER [J].

ETIENNE, P ;

MASSIES, J ;

LINH, NT .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1977, 10 (11) :1153-1155

[5] HIGH MOBILITY OF TWO-DIMENSIONAL ELECTRONS AT THE GAAS-N-ALGAAS HETEROJUNCTION INTERFACE [J].

HIYAMIZU, S ;

MIMURA, T ;

FUJII, T ;

NANB, K .

APPLIED PHYSICS LETTERS, 1980, 37 (09) :805-807

[6]

Judaprawira S., 1981, IEEE Electron Device Letters, VEDL-2, P14, DOI 10.1109/EDL.1981.25322

[7] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J].

MIMURA, T ;

HIYAMIZU, S ;

FUJII, T ;

NANBU, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) :L225-L227

[8] 2-DIMENSIONAL ELECTRON-GAS AT A SEMICONDUCTOR-SEMICONDUCTOR INTERFACE [J].

STORMER, HL ;

DINGLE, R ;

GOSSARD, AC ;

WIEGMANN, W ;

STURGE, MD .

SOLID STATE COMMUNICATIONS, 1979, 29 (10) :705-709

[9] HIGH MOBILITY GAAS-ALXGA1-XAS SINGLE PERIOD MODULATION-DOPED HETEROJUNCTIONS [J].

WITKOWSKI, LC ;

DRUMMOND, TJ ;

BARNETT, SA ;

MORKOC, H ;

CHO, AY ;

GREENE, JE .

ELECTRONICS LETTERS, 1981, 17 (03) :126-128

[10] HIGH MOBILITIES IN ALXGA1-XAS-GAAS HETEROJUNCTIONS [J].

WITKOWSKI, LC ;

DRUMMOND, TJ ;

STANCHAK, CM ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1980, 37 (11) :1033-1035

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