TANTALUM SILICIDE INTERCONNECT CHARACTERIZATION BY SURFACE ANALYTICAL TECHNIQUES

被引：7

作者：

CHANG, KY

PANCHOLY, RK

机构：

来源：

APPLIED SURFACE SCIENCE | 1981年 / 9卷 / 1-4期

关键词：

D O I：

10.1016/0378-5963(81)90049-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：377 / 387

页数：11

共 9 条

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CROWDER, BL ;

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[3]

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[4]

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[5] FILM PROPERTIES OF MOSI2 AND THEIR APPLICATION TO SELF-ALIGNED MOSI2 GATE MOSFET [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1431-1435

[6] SILICIDE FORMATION IN THIN COSPUTTERED (TANTALUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO2 [J].

MURARKA, SP ;

FRASER, DB .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) :1593-1598

[7]

NOWICKI RS, 1980, SOLID STATE TECHNOL, V23, P95

[8]

SARASWAT KS, 1979, P INT ELECTRON DEVIC, P462

[9] MOS COMPATIBILITY OF HIGH-CONDUCTIVITY TASI2-N+ POLY-SI GATES [J].

SINHA, AK ;

LINDENBERGER, WS ;

FRASER, DB ;

MURARKA, SP ;

FULS, EN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1425-1430

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