MOS COMPATIBILITY OF HIGH-CONDUCTIVITY TASI2-N+ POLY-SI GATES

被引：57

作者：

SINHA, AK

LINDENBERGER, WS

FRASER, DB

MURARKA, SP

FULS, EN

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 08期

关键词：

D O I：

10.1109/T-ED.1980.20051

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1425 / 1430

页数：6

共 16 条

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1409-1417

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