PICOSECOND ELLIPSOMETRY OF TRANSIENT ELECTRON-HOLE PLASMAS IN GERMANIUM

被引:141
作者
AUSTON, DH
SHANK, CV
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
[2] BELL TEL LABS INC,HOLMDEL,NJ 07733
关键词
D O I
10.1103/PhysRevLett.32.1120
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1120 / 1123
页数:4
相关论文
共 14 条
[1]  
ARCHER RJ, 1956, PHYS REV, V110, P354
[2]  
BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS
[3]   DIELECTRIC-CONSTANT AND PLASMA FREQUENCY OF P-TYPE GE LIKE SEMICONDUCTORS [J].
COMBESCOT, M ;
NOZIERES, P .
SOLID STATE COMMUNICATIONS, 1972, 10 (03) :301-+
[4]   PROPERTIES OF SILICON AND GERMANIUM [J].
CONWELL, EM .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1327-1337
[5]   PROPERTIES OF SILICON AND GERMANIUM .2. [J].
CONWELL, EM .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06) :1281-1300
[6]   INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].
DASH, WC ;
NEWMAN, R .
PHYSICAL REVIEW, 1955, 99 (04) :1151-1155
[7]   OBSERVATION OF REFLECTED LIGHT HARMONICS AT BOUNDARY OF PIEZOELECTRIC CRYSTALS [J].
DUCUING, J ;
BLOEMBERGEN, N .
PHYSICAL REVIEW LETTERS, 1963, 10 (11) :474-&
[8]   EXCESS CARRIERS INDUCED IN INDIUM-ANTIMONIDE WITH A CARBON-DIOXIDE LASER [J].
FOSSUM, HJ ;
CHEN, WS ;
ANCKERJO.B .
PHYSICAL REVIEW B, 1973, 8 (06) :2857-2868
[9]  
GALKIN GN, 1968, JETP LETT-USSR, V7, P69
[10]  
GALKIN GN, 1968, PISMA ESKP TEOR FIZ, V7, P93