PROPERTIES OF SILICON AND GERMANIUM .2.

被引:144
作者
CONWELL, EM
机构
来源
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1958年 / 46卷 / 06期
关键词
D O I
10.1109/JRPROC.1958.286957
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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页码:1281 / 1300
页数:20
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共 116 条
[1]   THEORY OF THE GALVANOMAGNETIC EFFECTS IN GERMANIUM [J].
ABELES, B ;
MEIBOOM, S .
PHYSICAL REVIEW, 1954, 95 (01) :31-37
[2]   THE OPTICAL CONSTANTS OF A SINGLE CRYSTAL OF GERMANIUM [J].
AVERY, DG ;
CLEGG, PL .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1953, 66 (402) :512-513
[3]   CONDUCTIVITY MOBILITIES OF ELECTRONS AND HOLES IN HEAVILY DOPED SILICON [J].
BACKENSTOSS, G .
PHYSICAL REVIEW, 1957, 108 (06) :1416-1419
[4]  
BARDEEN J, PHOTOCONDUCTIVITY C
[5]  
BEMSKI G, UNPUB J ELECTROCHEM
[6]   HALL DRIFT MOBILITIES - THEIR RATIO AND TEMPERATURE DEPENDENCE IN SEMICONDUCTORS [J].
BLATT, FJ .
PHYSICAL REVIEW, 1957, 105 (04) :1203-1205
[7]   ABSORPTION OF INFRARED LIGHT BY FREE CARRIERS IN GERMANIUM [J].
BRIGGS, HB ;
FLETCHER, RC .
PHYSICAL REVIEW, 1953, 91 (06) :1342-1346
[8]  
BURSTEIN E, 1956, PHOTOCONDUCTIVITY C
[9]   IMPURITY CENTERS IN GE AND SI [J].
BURTON, JA .
PHYSICA, 1954, 20 (10) :845-854
[10]   PROPERTIES OF SILICON DOPED WITH MANGANESE [J].
CARLSON, RO .
PHYSICAL REVIEW, 1956, 104 (04) :937-941