PROPERTIES OF SILICON DOPED WITH MANGANESE

被引:57
作者
CARLSON, RO
机构
来源
PHYSICAL REVIEW | 1956年 / 104卷 / 04期
关键词
D O I
10.1103/PhysRev.104.937
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:937 / 941
页数:5
相关论文
共 17 条
[1]  
BROOKS H, 1955, ADVAN ELECTRON ELECT, V7, P110
[2]  
COLLINS CB, 1956, B AM PHYS SOC, V1, P127
[3]  
COLLINS CB, 1956, B AM PHYS SOC 2, V1, P49
[4]   INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].
DASH, WC ;
NEWMAN, R .
PHYSICAL REVIEW, 1955, 99 (04) :1151-1155
[5]  
DASH WC, 1955, PHYS REV, V98, P1536
[6]   DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J].
FULLER, CS ;
DITZENBERGER, JA .
JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) :544-553
[7]  
GALLAGHER CJ, 1955, PHYS REV, V100, P1259
[8]  
HALL R, COMMUNICATION
[9]   TRAPPING OF MINORITY CARRIERS IN SILICON .2. N-TYPE SILICON [J].
HAYNES, JR ;
HORNBECK, JA .
PHYSICAL REVIEW, 1955, 100 (02) :606-615
[10]  
HODGKINSON RJ, 1955, PHILOS MAG, V46, P410