ALLOYING REACTION IN THIN NICKEL FILMS DEPOSITED ON GAAS

被引：89

作者：

OGAWA, M

机构：

来源：

THIN SOLID FILMS | 1980年 / 70卷 / 01期

关键词：

D O I：

10.1016/0040-6090(80)90426-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：181 / 189

页数：9

共 9 条

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[2]

Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

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[4]

OGAWA M, 1971, I PHYS C SER, V9, P268

[5]

OHATA K, 1974, 12TH ANN P IEEE REL, P278

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[7] TOPOTACTIC REACTION BETWEEN NICKEL AND GALLIUM-ARSENIDE [J].

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WARD, RCC .

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[8] STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF PLATINUM-SILICIDE-SILICON CONTACTS AS INFLUENCED BY SPUTTER ETCHING AND ANNEALING AMBIENT [J].

SEVERI, M ;

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CELOTTI, G .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) :1998-2003

[9] EFFECT OF ALLOYING BEHAVIOR ON ELECTRICAL CHARACTERISTICS OF N-GAAS SCHOTTKY DIODES METALLIZED WITH W, AU, AND PT [J].

SINHA, AK ;

POATE, JM .

APPLIED PHYSICS LETTERS, 1973, 23 (12) :666-668

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