BONDING DIRECTION AND SURFACE-STRUCTURE ORIENTATION ON GAAS (001)

被引:227
作者
CHO, AY [1 ]
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
关键词
D O I
10.1063/1.323081
中图分类号
O59 [应用物理学];
学科分类号
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页码:2841 / 2843
页数:3
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[11]   ETCHING AND INHIBITION OF THE (III) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS - INSB [J].
GATOS, HC ;
LAVINE, MC .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 :169-&
[13]   STRUCTURE AND ADSORPTION CHARACTERISTICS OF CLEAN SURFACES OF GERMANIUM AND SILICON [J].
SCHLIER, RE ;
FARNSWORTH, HE .
JOURNAL OF CHEMICAL PHYSICS, 1959, 30 (04) :917-926
[14]   SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATIONS ON SI(111) UNRECONSTRUCTED AND (2X1) RECONSTRUCTED SURFACES [J].
SCHLUTER, M ;
CHELIKOWSKY, JR ;
LOUIE, SG ;
COHEN, ML .
PHYSICAL REVIEW LETTERS, 1975, 34 (22) :1385-1388