OHMIC CONTACTS TO GAAS AND GAXAL1-XAS

被引：7

作者：

BRASLAU, N

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.582581

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：700 / 701

页数：2

共 18 条

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[10] LOW-NOISE NORMALLY ON AND NORMALLY OFF TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTORS [J].

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